HIGH PRESSURE PHASE TRANSFORMATIONS

OF SEMICONDUCTORS AND CERAMICS

August 20-22, 2003

This workshop is part of a National Science Foundation (NSF)

Focused Research Group (FRG) research program.

 The Office of Continuing Education is a part of
Continuing Education, Extension & Summer Programs
University of North Carolina at Charlotte

ABSTRACTS

Ceramic Machining using Single-Point Carbon Nanotube Tools

 Jones B. Arnold and Roland D. Seals

Abstract
The performance of single-point carbon nanotube turning (SPCNT) tools were evaluated while precision machining aluminum oxide (Al2O3), and beryllium oxide (BeO).  Tools manufactured from previously known materials such as diamond and cubic boron nitride will not endure while machining these ceramic materials.  This project has demonstrated that SPCNT tool exhibited the best performance to date for single-point turning these ceramics.  Improvement in toughness of SPCNT composite structure is required to provide the tools necessary for industrial use to machine ceramics.  Additional R&D funding is being requested to further enhance the carbon nanotube material.

Characterization of Subsurface Damage and Phase Transformations of Ceramics Using Scanning Acoustic Microscopy*

Jun Qu#, Samuel B. McSpadden Jr., Peter J. Blau
Metals and Ceramics Division, Oak Ridge National Laboratory

Abstract

With two unique advantages over other characterization instruments, non-destructive subsurface imaging and elastic property visualization, Scanning Acoustic Microscopy (SAcM) has shown significance in material property characterization and flaw detection.  In this study, a high-frequency scanning acoustic microscope (SAM2000) was used to identify subsurface damage and phase transformations of semiconductors and ceramics during manufacturing processes.  A variety of ceramic materials machined by different manufacturing processes have been investigated.  Examples include silicon nitride by grinding and single-point diamond turning, silicon carbide by diamond wire saw cutting, and zirconia and silicon nitride by laser dimpling.  Cracks were observed on and underlying the ground, diamond wire saw cut, and laser dimpled surfaces.  The SAcM images of the silicon nitride surfaces processed by single-point diamond turning showed a layer of smeared like material, which has been proposed to be amorphous due to high pressure phase transformation during the cutting process.  The thickness of the phase-transformed zone was proportional to the depth of cutting.  Although the SAcM has shown impressive results, some acoustic images are difficult to interpret since the image contrast reflects mixed signals of surface topography, subsurface features, material structures, and mechanical properties.
________________________

*  Research sponsored by the U.S. Department of Energy, Assistant Secretary for Energy Efficiency and Renewable Energy, FreedomCAR and Vehicle Technologies Program, under contract DE-AC05-00OR22725 with UT-Batelle LLC, Oak Ridge, Tennessee.
 

#  Corresponding author, P.O. Box 2008 MS 6063, Oak Ridge, TN 37831-6063,
 E-mail: qujn@ornl.gov
 

Ductile Regime Machining of Silicon Nitride: A Numerical Study Using Drucker-Prager Material Model

 Satya K. Ajjarapu, Ronnie R. Fesperman, John A. Patten and
Harish P. Cherukuri
Center for Precision Metrology
Department of Mechanical Engineering and Engineering Science
The University of North Carolina at Charlotte
Charlotte, NC 28223-0001

 Chris Brand
Third Wave Systems
Minneapolis, MN 55439 USA

Abstract
In a previous work, the authors reported results from numerical simulations of ductile regime machining of silicon nitride using the commercial machining simulations package ADVANTEDGE.  The material model used in these simulations was power-law type and the yield criterion was pressure independent.  However, experimental evidence strongly suggests that the brittle-to-ductile transition of silicon nitride is pressure-dependent.  Specifically, experiments indicate that the ductile regime machining is possible when the hydrostatic pressure within the workpiece is of the same order of magnitude as the hardness.

Recently, to account for pressure sensitivity of silicon nitride, a Drucker-Prager yield criterion was implemented into ADVANTEDGE.  The parameters in the criterion are chosen so that yielding occurs at very high hydrostatic pressures.  Results from these simulations for micro- and submicro-depths of cuts are presented. A parametric study was also carried out to study the effect of cutting speed, depth of cut and rake angle on the pressure fields (and hence on the conditions suitable for ductile machining) in the silicon nitride woripieces.

Force data from experiments using a Diamond Turning Machine is also presented.  Chip morphology is studied for the machined depths using Scanning Electron Microscopy and ductile-to-brittle transition depth is determined from the chip images.  In addition, cutting tools are inspected using Optical Microscope to correlate tool wear to forces and ductile/brittle behavior.  The force data from the experimental and numerical analyses are correlated using the ratio of Cutting Force to Chip Area.

Effect of alcohols on diamond machining of materials
 

Stephen Hsu, NIST
 

Abstract
When using diamond as a machining tool, hydrothermal oxidation of diamond is the dominant mechanism for diamond tool wear.  To reduce dulling of diamond tools and increase machining speeds, the diamond tools are periodically “dressed” to maintain their efficiency. We examined the basic mechanisms of diamond oxidation in the presence of water and developed a fluid that will form a tenacious film on the surface of diamond preventing the diamond from rapid hydrothermal oxidation.  When the fluid is used to machine ceramics, the rate of cutting is increased significantly.  This paper will discuss the details of this study.

Electrical and Optical Detection of the High Pressure Metallic Phase of Silicon In-situ During Scratching with Diamond:  Electrical and Optical Heating of the High Pressure Phase Material and its Effect on the Material’s Hardness

John A. Patten, UNC Charlotte and Western Michigan University
Professor and Director of Manufacturing Research

  Lei Dong, PhD Student, UNC Charlotte, Center for Precision Metrology

  Jimmie A. Miller, UNC Charlotte, Center for Precision Metrology

Keywords:  High Pressure Phase Transformation, Silicon, Electrical and Optical measurements, in-situ, Scratching

Abstract
Scratching experiments were carried out on silicon wafers (100) with diamond styli of nominal 2, 5, and 10 µm radius.  Parameters investigated were: load (10 to 100 mN) and depth of penetration, material hardness, electrical current effects and measured resistance, and speed effects.  Direct electrical heating of the metallic high pressure phase of silicon, during scratching experiments, with currents ranging from 1 mA to 1 A (for resistance heating the material), resulted in substantial heating and thermal softening of the metallized silicon.  In addition to the in-situ measurements, post process analysis included AFM and SEM imaging and analysis.  For currents above 100 mA (and loads of 50 mN and higher), substantial electrical resistance heating took place resulting in estimated temperatures of 600°C and a corresponding dramatic drop in hardness to about one-half (6 GPa) the nominal ambient conditions value.  Direct heating and subsequent softening of the high pressure metallic phase of silicon is proposed as a possible manufacturing augmentation mechanism to reduce tool wear and increase productivity for silicon processing.  Further testing with electrical induction heating and infrared-optical heating will be discussed and reviewed.  Additional inspection techniques such as micro-Raman and TEM will also be presented.

Extending Electrical Resistivity Measurements in Micro-scratching of Silicon: Toward Optimal Thermal Modeling of Ductile Regime Machining for MEMS/NEMS

Hisham A Abdel-Aal
Department of Mechanical Engineering Technology
York Technical College
452 S. Anderson St., Rock Hill, SCM U. S. A
Haabdela@excite.com

Abstract
The implementation of many Micro Electronic Mechanical Systems (MEMS) involve several silicon machining processes.  These processes introduce structural damage in the material.  The trend in removing this damage is to apply finishing techniques such as grinding or lapping, etc.  Since silicon is a brittle material, the removal of material is expected to take place through the propagation of fracture.  This render the machining process more difficult to control.

Material removal in the ductile regime, which is more attractive for surface quality purposes, was theorized to be possible in the late eighties.  Since Ductile Regime Machining (DRM) is favorable, due to the higher quality of the resulting surface, it is required to understand the mechanism by which silicon behaves as a ductile material.  This hinges on understanding the energetics of silicon metallization under pressure.  Fundamental to such endeavor is the parametric thermal modeling of the DRM process itself.  Such a model is not yet possible since the metallic phases of silicon aren't readily amenable to thermal characterization through direct measurements.  This being the case, one has to rely on processing indirect measurement data to deduce refined estimates of the thermal transport properties of Silicon.  One of the most popular, perhaps more established, measured quantities is the electrical resistivity.  In fact many researchers monitor the variation in the electrical resistivity of silicon during indentation to indicate a semi-conductor-to-metal phase transformation.

The region of the material under the indenter is metallic.  As such, the electrical resistivity and the thermal conductivity of the transformed phase should obey the Wiedman-Franz- Lorenz law.  That is both these properties are interrelated and can be estimated if either of them is known along with the temperature at the specific point with any certainty.  This paper, therefore, describes a procedure by which the average thermal conductivity of the metallic phase of silicon is extracted from electrical resistivity measurements.  The procedure is based on teaming a temperature evaluation code to the resistivity measurements.  Thus allowing the extraction of the conductivity as a function of temperature.

High Pressure Surface Science of Semiconductors and Ceramics

Yury Gogotsi, Vladislav Domnich
Department of Materials Science and Engineering
Drexel University, Philadelphia, PA, USA

Abstract
In majority of mechanical applications of materials, their surface experiences a contact with another material and takes the external load before the bulk of the material is influenced.  In some cases, surface interactions influence the bulk (e.g., propagation of cracks, dislocations or point defects from the surface in depth).  In many cases, only the outermost surface layer is affected by the surface contact with no detectable changes in the bulk of the material.  We are primarily concerned in this review with that kind of interactions. The thickness of the surface layer affected by the external mechanical forces ranges from nanometers to micrometers.  Thus, in our case, the definition of “surface” is different from the one used by surface scientists.  We need to introduce an engineering definition of the surface as the outermost layer of the material that can be influenced by physical and/or chemical interaction with other surfaces and/or the environment.

During contact interactions, a harder object can leave imprints on the material surface.  In particular, when a hard indenter (e.g., diamond) touches the surface of another hard material (ceramic or semiconductor), very high pressures (up to one megabar) can be achieved under the indenter because the contact area in the beginning of the penetration of the indenter into material is small.  These pressures can exceed the phase transformation pressure for many materials.  Understanding and appreciation of this fact can help to understand the mechanisms of wear, friction and erosion.  High shear stresses and flexibility of contact loading conditions allow one to drive phase transformation that cannot occur under hydrostatic stresses, or would occur at much higher pressures.

We will describe phase transformations and amorphization that occur in many semiconductors under contact loading such as indentation with hard indenters or scratching, grinding, milling, etc.  Contact loading is one of the most common mechanical impacts that materials experience during processing or application.  Examples are cutting, polishing, indentation testing, wear, friction and erosion.  This kind of loading has a very significant nonhydrostatic component of stress that may lead to dramatic changes in the materials structure, such as amorphization and phase transformation.  Simultaneously, processes of plastic deformation, fracture and interactions with the environment and counterbody can occur.  The latter have been described in numerous publications, but the processes of phase transformations at the sharp contact were investigated only during past decade and the data obtained have never been summarized.  This problem is at the interface between at least three scientific fields, namely materials science, mechanics and solid state physics.  Thus, an interdisciplinary approach will be used to describe how and why a nonhydrostatic (shear) stress in the two-body contact drive phase transformations in materials.

Mechanically Induced Phase Transformations
and Metallization in Solids

John J. Gilman
Department of Material Science and Engineering
University of California at Los Angeles
Los Angeles, CA 90095

Abstract (Revised:  5/2/03)
Although pressure is commonly considered to be the driver for mechanically-induced phase transformations in solids, its role is limited.  Shearing forces are often more important because transformations involve changes of shape, and therefore of symmetry, and pressure changes neither of these.  Also, transformations in semiconducting crystals are usually accompanied by metallization at constant bond length so the Hertzfeld-Mott mechanism does not apply.  Pressure changes density, so it participates when the density changes.  However, twinning for example, is a shape change at constant density. 

In order to change from one phase to another, a solid must pass over an energy barrier.  An important role of shear is to facilitate this.  At high temperatures, and/or low rates, it does this in conjunction with thermal activation.  At low temperatures, and/or high rates, it does it by destabilizing the initial phase.  Shear strains cause destabilization of molecules and solids through their effects on electronic structures.  Shear tends to reduce energy gaps to values that can be overcome by the energies of zero-point vibrations.  Pressure sometimes has the opposite effect, tending to stabilize electronic structures.  In other cases hydrostatic reduces gaps and leads to metallization.

The fact that energy densities are often more pertinent than bare energies in determining the properties of solids is also discussed.

Molecular Dynamics Simulations of
Nanoindentation of 3C SiC with Diamond Indenter

A. Noreyan,¹ J.G. Amar,² and I. Marinescu^1
1Dept. of MIME, ²Dept. of Physics & Astronomy
University of Toledo
Toledo, OH   43606

Abstract
The results of parallel molecular dynamics simulations of nanoindentation of the (001) surface of cubic silicon carbide (3C-SiC) by a diamond tip are presented.  Our simulations are carried out using the Tersoff SiC empirical potential which accurately reproduces the lattice and elastic constants of the cubic and rocksalt structures. Isothermal simulations were carried out in order to study the dependence of the critical depth and pressure for elastic-to-plastic transition on a variety of parameters, including the indentation velocity, tip area, and workpiece temperature. It was found that when the indenter tip area is bigger then a specific value, hysteresis of the load-unload curve of force as a function of depth of indentation occurs when the pressure exceeds 140 Gpa.  For smaller indenters, the critical pressure is significantly larger. In addition, the critical indentation depth depends strongly on the indenter size for small indenters but does not depend on the indenter velocity over the range studied.  The onset of the observed plastic behavior appears to be related to a phase transition from the cubic zinc-blende structure to the rocksalt structure for pressures above 140 GPa under the indenter tip, which is in reasonable agreement with both experimental and  theoretical studies of pressure-induced structural transformation in SiC.

Nanoindentation and Raman Microspectroscopy Studies of Boron Carbide Single Crystals

Vladislav Domnich, Thomas Juliano, Daibin Ge, Yury Gogotsi
Department of Materials Science and Engineering
Drexel University, Philadelphia, PA 19104, USA

Abstract
Boron carbide is a material with unusual properties that make it useful in several applications.  It is one of the hardest materials known and it is widely used as an abrasive and in lightweight armor.  It is a semiconductor with novel transport properties and has potential applications as a high temperature thermoelectric.  Given the high hardness of boron carbide, it is of fundamental interest to explore its mechanical properties and structural stability under conditions of extreme contact pressures.  Because mechanical properties vary with crystallographic orientation, it is advantageous to make the measurements on oriented single crystal samples. In this work, we perform depth-sensing (nano)indentation on the (111) and (001) faces of boron carbide single crystals.  Our analysis suggests that the average contact pressure during indentation of boron carbide with a sharp diamond indenter reaches ~ 40 GPa.  The contact pressure vs. contact depth curves are then analyzed for any peculiarities that might be indicative of material’s transformation into a new phase.  Post-indentation Raman microspectroscopy and transmission electron microscopy studies of the residual imprints suggest dramatic structural changes in the affected material that might be due to a phase transformation.  Possible implications and the deformation/transformation mechanisms are discussed.

Nano/Micro-Tribology of Chemical-Mechanical Polishing

  Dr. Norm V. Gitis, President, Center for Tribology
Chairman, STLE Technical Committee on Tribotesting
Vice-Chair, ASTM G-2 Subcommittee on Wear
1715 Dell Avenue, Campbell, CA 95008, USA

Tel. direct:      408-376-4041
Secretary:      408-376-4040
Fax:              408-376-4050
Email:           gitis@cetr.com

Abstract
The tribological phenomena of chemical-mechanical polishing, including transformations in wafer, slurry and pad materials during the process, is described in detail.  Novel in-situ multi-sensing metrology, based on friction and wear monitoring, is presented.  A bench-top polisher with the in-situ metrology allows for effective functional evaluation of CMP materials (pads, slurries, conditioners, as well as wafer layers) and fast inexpensive CMP process development.

New Nanoindentation and Scanning Probe Tools and Techniques

Warren C. Oliver

Abstract
Recent developments in the tools and techniques associated with Nanoindentation and probe scanning techniques will be presented.  New calibration techniques provide simpler verification of system performance and accuracy.  Quantitative sample scanning equipment and techniques provide the user with new tools for the mechanical characterization of miniature structures (MEMS) and allow for new types of mechanical properties testing of films.  The capabilities of these tools will be described and several examples of their use will be presented.

On the role of crystal orientation in ductile cutting of brittle materials

Eric Marsh, Brian O’Connor, and Jeremiah Couey

Abstract

In this talk, we will review results from a series of cutting experiments with silicon and calcium fluoride.  The tests quantify the critical depth of cut in which the apparent material removal mechanism changes from ductile to brittle.  This transition depth of cut shows a strong dependence on crystal orientation as does the forces measured during cutting.  The talk will also present some observations on tool geometry and tool wear.

Phase Transformation and Cracking
in Brittle Materials during Nanoindentation

Jae-il Jang*, Songqing Wen, and George M. Pharr
The University of Tennessee, Department of Materials Science & Engineering,
434 Dougherty Engineering Building, Knoxville, TN 37996-2200
and
Oak Ridge National Laboratory, Metals and Ceramics Division, P.O. Box 2008,
Oak Ridge, TN 37831
(* Visiting scholar from  Frontics, Inc., Baik-Gwang Bldg., Seoul 151-060, Korea)

Abstract
Nanoindentation has been used to examine two phenomena important in the precision machining of semiconductor and ceramic materials:  pressure-induced phase transformations and small-scale cracking.  Experiments were performed in several brittle materials including Si, SiC, and Si₃N₄ using a series of triangular pyramidal indenters with centerline-to-face angles in the range 35° to 85°.  These indenters simulate contact deformation processes occurring during single point diamond turning and grinding.  The influences of indenter geometry, load, and loading rate were systematically examined to establish cracking thresholds and provide evidence for phase transformations.  High resolution scanning electron microscopy was used to examine indentations as small as 50 nm in depth in order  to characterize the cracking and contact damage.  Results are presented and discussed in terms of prevailing descriptions and models for indentation-induced phase transformation and cracking.

Plasticity and Fracture of Semiconductors

P. Pirouz, M. Zhang and S. Wang,
Department of Materials Science and Engineering,
Case Western Reserve University, Cleveland, OH 44106-7204, U.S.A.
and
J. L. Demenet, Laboratoire de Metallurgie Physique,
CNRS, SP2MI, 86960 Futuroscope Cedex, France

Keywords: Yield stress, fracture stress, brittle-to-ductile transition temperature, TEM, dislocation core.

Abstract
Detailed measurements on the temperature dependence of the yield stress of a wide bandgap semiconductor, 4H-SiC, have been made.  It is found that a transition in the yield stress occurs at a temperature T_c (close to 1000°C) that shifts with the strain rate .  The dislocation configurations in the samples deformed below and above T_c have been characterized by TEM and show an unexpected change from single Shockley partials to total dislocations.  In addition, using fracture experiments, the brittle-to-ductile transition temperature T_BDT of 4H-SiC has been determined at different strain rates and it has been found that T_c and T_BDT are very close, and may actually be identical.  In another set of experiments, 4H-SiC crystals have been deformed at very low temperatures (room temperature and 150°C) in a multi-anvil apparatus and the configurations of dislocations investigated by TEM.  The difference between the dislocations generated in intermediate temperature/normal pressure and low temperature/high pressure experiments are discussed on the basis of the structure of dislocation cores in SiC. Based on the experimental results, a simple model to explain the yield and fracture behavior of SiC has been developed.  In addition, recent measurements on the brittle–to-ductile transition temperature in GaAs will be presented and compared to the wide bandgap semiconductor, SiC.

The Role of the Local Environment in CMP

Lee M. Cook
Senior Technology Fellow
Rodel Inc.
Newark, DE

Abstract
Planarization of integrated circuit device structures via Chemo-Mechanical Polishing (CMP) has emerged as a critical process technology in semiconductors.  As device wiring schemes migrate to ductile metals (e.g., Cu), and fragile porous dielectrics, precise control and understanding of the role of local forces and stress in the CMP process is critical to developing high yield CMP processes.  This talk reviews current models for the local CMP environment, their impact on process consumables design, and effects on current device process issues.

Scribing of Silicon and Ceramics

T. Randall and R. O. Scattergood
Materials Science and Engineering Department
North Carolina State University
Raleigh, NC 27695-7907

Keywords: Scribing, Residual Stress, High Pressure Phase Transformation, Raman

Abstract
Controlled scribing tests are being done on silicon single crystals and silicon-nitride coated silicon.  Profilometer measurements of a bend effect are being made on the scribed samples to determine the residual stress signature due to the scribe deformation.  Residual stress is analyzed using a line-force dipole model.  The force-dipole strength is a direct measure of the stresses.  Tests are being done as a function of load, scribing direction, scribe-tip geometry and environment.  Raman measurements on scribed samples are being carried out in a parallel study.  The results will disclose effects of the stress-induced phase transformation on the deformation and concomitant residual stress and fracture generation processes.

Some Experimental and Theoretical Observations on the Deformation Mechanisms of Monocrystalline Silicon Subjected to Indentation, Machining and Compression

Liangchi Zhang
School of Aerospace, Mechanical and Mechatronic Engineering
The University of Sydney, NSW 2006, Australia

Abstract
This presentation will discuss the deformation and atomic structural changes of mono-crystalline silicon in terms of phase transformations under various loading conditions, such as hydrostatic compression and complex stressing in machining, indentation and tribological sliding.  It will also report the effects of chemical and cyclic loading.  A detailed comparison of the theoretical results from molecular dynamics simulation and those by electron microscopy analysis will be demonstrated.

UV Raman Scattering in SiC Indents

J.J. Huening¹, J.-i. Jang ², G.M. Pharr², X. Chen³, L. Bergman³, R.J. Nemanich¹

1.  North Carolina State University, Raleigh, NC 27695-7918

2.  The University of Tennessee, Knoxville, TN 37996

3.  University of Idaho, Moscow, ID 83843

Keywords:  UV Raman, 6H-SiC, high-pressure indentations, stress, phase transition

Abstract
Ultraviolet micro-Raman spectroscopy is used to investigate the effects of plastic flow and induced stresses in single crystal 6H-SiC subjected to high-pressure indentations.  A diamond tool under a constant loading rate of 5 mN/sec is used to form triangular shaped indentations on the surface of the material.  The pressures achieved at the contact points between the indenter tool and the material can cause stress and phase transitions in the crystalline structure of the material. 

The crystal structures of several load indentations were analyzed.  A UV wavelength of 244 nm has energy greater than the bandgap of SiC and thus allows for the investigation of this material at depths close to its surface.    It was found that the TO and LO Raman mode frequencies increase with increased indent pressure.  This shift in frequency is indicative of compressive stress in the material.  In zones of maximum stress, the shift can be as large as 9 cm^-1 in the TO mode and 5 cm^-1 in the LO mode and is most likely associated with crack formation and plastic deformation in the material.  According to Liu et al¹, the frequency change corresponds to a residual stress in the material between 1 and 3 GPa.   In addition to the presence of stress caused by indentation, broad features in the spectra may indicate an amorphous phase.

1.  Jun Liu and Yogesh K. Vohra, Physical Review Letters, 72 (26), 4105 (1994).

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Schedule

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Guidelines for Submitting Posters to the HPPT Summer, 2003 Workshop

The Actual Poster at the Workshop

The workshop will provide each poster presenter with a white foam-core board (1/8” thick; 32” wide x 40” tall) on an easel.  The presenter should bring with him or her materials (poster) to affix to the core board that contain the content/substance of the presentation.  Materials (poster) can be affixed to the foam-core board using push-pins or tacks, or a spray/brushed adhesive (the workshop will provide push-pins and tacks, and an adhesive that presenters can use).

The typesizes, the fonts, the boldness of the materials (the text and graphics; any three-dimensional objects) affixed to the core board should be selected by the presenter with a view to making the poster readable to a person standing some distance from it.  A presenter might prepare, and affix to the board, a series of individual strips of paper with headings and sub-headings; a series of 8.5 x 11” papers; three-dimensional objects; etc.  A Word document or Power Point Presentation or Graphic are suitable for poster material.

The CD of Papers/Poster Presentations

The content/substance of each poster presentation will be included, to the extent that its format is conducive to this, on the CD of papers/poster sessions that will be distributed to workshop participants.  While the poster itself can be a mosaic of two- and three-dimensional objects affixed to it, to be included on the CD those objects need to be translated into a clear, well organized, linear Word, Power Point, PDF or HTML document.

The following guidelines are provided merely to ensure some consistency in format in the presentation of the poster on the CD that will be distributed to workshop participants.

Authors should follow the conventions of their academic discipline with respect to references, scientific notation, diagrams, figures, etc.

1. Please prepare the materials in a recent version of the software used.
    

2. Center the title, author(s) and affiliation of the presentation at the top and center of the poster.
    
3. Use appropriate headings and subheadings labeled accordingly.
    
4. Please e-mail a copy of the poster document to:  lchampio@email.uncc.edu.  Please include in your e-mail your telephone number so that we can communicate with you should there be problems in opening the  document, or problems with any diagrams or figures that you may have inserted in the text.
    
5. Versions of poster presentations that are to be included on the CD must be received by 5:00 p.m. on August 1, 2003 to ensure their inclusion on the CD.

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Guidelines for Submitting Papers to the HPPT Summer, 2003 Workshop

These guidelines are provided merely to ensure some consistency in format in the presentation of the papers in the notebook in which they will be bound, and on the CD of the papers that will also be distributed to workshop participants.

Authors should follow the conventions of their academic discipline with respect to references, scientific notation, diagrams, figures, etc.

1. Please prepare the paper in a recent version of Microsoft Word.
    
2. Use the Times New Roman 12 typeface.
    
3. Set a 1.25” left margin; the top, right, and bottom margins should be set at 1.00”.
    
4. Single-space text.  Double-space between paragraphs.
    
5. Do not indent new paragraphs.
    
6. Set the pages to number automatically in the upper-right hand corner of the page.  Omit a page number on the first page.
    
7. Center the title of the paper at the top of the first page.  Insert one blank line of space beneath the title.
    
8. Center the name of the author(s) and any other identifying information on the author(s) that would customarily appear in such papers (e.g., name of employing institution).  Insert one blank line of space beneath the author information.
    
9. Insert an abstract of the paper, with the text beginning at the left-margin (i.e., do not center the information; do not indent the abstract paragraph).  Insert one blank line of space beneath the abstract.
    
10. Begin the text of the paper.  Use appropriate headings and subheadings labeled accordingly.
     
11. Please e-mail a copy of the Word document to:  lchampio@email.uncc.edu.  Please include in your e-mail your telephone number and e-mail address so that we can communicate with you should there be problems in opening the Word document, or problems with any diagrams or figures that you may have inserted in the text. 
     
12. If it is not likely that your electronic transmission will be easily and simply printed on a typical LaserJet printer, then please consider sending a paper copy, ready for copying and inserting into the workshop notebooks.  Mail papers to:  Lyndee Champion, Continuing Education, UNC Charlotte, 9201 University City Boulevard, Charlotte, NC  28223.  Again, please include with your submission a telephone number and an e-mail address so that we can communicate with you should we have questions or need advice in reproducing your manuscript in the notebook or incorporating it into the CD.
     
13. Papers must be received by 5:00 p.m. on August 1, 2003 to ensure their inclusion in the workshop notebook and CD.

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Registration Options – Four Easy Ways To Register 

1.  Online.  Please note:  Online registration is available only to those paying with a MasterCard or Visa and possessing a U.S. mailing address/phone number and social security number.  Others should use one of the three registration options below.  If you have questions, or if you require assistance in completing the registration process, please contact Lyndee Champion by phone at 704-687-4452 or by e-mail at lchampio@email.uncc.edu.

2.    Fax completed registration form (see Printable Registration Form) with MasterCard/Visa information or purchase order number/information to:  704-687-3158.

3.    Mail completed registration form (see Printable Registration Form) with check (made payable to UNC Charlotte Continuing Education), MasterCard/Visa information, or purchase order number/information to: 

HPPT Workshop

Continuing Education

The University of North Carolina at Charlotte

9201 University City Blvd.

Charlotte, NC  28223-0001

4.    Telephone requested registration information (see Printable Registration Form) with MasterCard/Visa information, or purchase order number/information to:  704-687-4452.

Accommodation of Disabilities

Accommodations will be made available upon request for persons with disabilities.  Accommodations must be specifically identified in writing at least two weeks prior to the program. 

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