Comprehensive studies were undertaken to examine pressure-induced phase transformations and small-scale cracking during nanoindentation of Si, Ge, SiC, and Si3N4. Understanding these deformation phenomena is of paramount importance in advanceing precision machining of these technologically important semiconductors and ceramic materials. Significant differences in behavior were observed depending on the acuity of the pyramidal indenter as characterized by the center-line-to-face angle, y. The nature of the deformation mechanisms was examined by electron microscopy and micro-Raman spectroscopy.
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Nanoindentation Tests |
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